(us1a~us1m) sma a high efficiency recovery rectifiers major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm 30 a t rr 50 ns , 75 ns v f 1.0 v , 1.3 v , 1.7 v t j max. 150 c features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? ultrafast reverse recovery time ? low switching losses, high efficiency ? high forward surge capability ? high temperatrue soldering ? 260 /10 seconds at terminals ? component in accordance to rohs 2002/95/1 and weee 2002/96/ec mechanical date ? case: jedec do-214ac molded plastic body over passivated chip ? terminals: solder plated, solderable per j-std-002b and jesd22-b102d ? polarity: laser band denotes cathode end maximum ratings & thermal characteristics & electrical characteristics (ta = 25 c unless otherwise noted) symbol (us1a) (us1b) (us1d) (us1g) (us1j) (us1k) (us1m) unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current i f(av) 1 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a maximum instantaneous forwad voltage at 1.0 v f 1.0 1.3 1.7 v maximum dc reverse current t a = 25 at rated dc blocking voltage t a = 100 i r 5.0 a 50 a maximum reverse recovery time at i f = 0.5 a , i r = 1.0 a , i rr = 0.25 a t rr 50 75 ns typical junction capacitance at 4.0 v ,1mhz c j 15 10 p f thermal resistance from junction to ambient r ja 75 / w operating junction and storage temperature range t j , t stg C55 to +150
(us1a~us1m) sma high efficiency recovery rectifiers characteristic curves (t a =25 unless otherwise noted)
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